Speaker: Wei Lan, University of Waterloo

Time: 10:00-11:30 a.m., July 19, 2023, GMT+8

Venue: Micro/Nanoelectronics Building, Room 205

Biography:

Prof. Lan Wei received her B.S. in Microelectronics from Peking University, China (2001), M.S and Ph. D. in Electrical Engineering from Stanford University, USA (2007 and 2010, respectively). She is currently an Associate Professor at the University of Waterloo, Canada. She has intensive experience in device physics-based compact modeling including silicon and GaN technologies, device-circuit interactive design and optimization, integrated nanoelectronic systems with low-dimensional materials, cryogenic CMOS device modeling and circuit design for quantum computing. She has authored/co-authored more than 90 peered reviewed publications and served on the technical program committees including IEDM, ICCAD, DATE, ISQED etc.

Biography:

Given its high mobility, high breakdown voltage and decent thermal conductivity, GaN HEMT devices have shown great promise for high-power high-frequency (HP-HF), rapidly rising as a front runner for mm-wave to THz analog/RF circuits for IoT and 5G/6G wireless communication. Meanwhile, it is also heavily explored for power electronic applications for fast charging, data center, and electric vehicles. As GaN technology continues to improve, challenges of high design cost and sub-optimal system performance emerge as bottlenecks preventing the technology from wide scale deployment. Accurate, scalable and efficient compact model is key to overcome such challenges.

This presentation will provide a brief overview of the physics-based MVSG GaN HEMT compact model, including the model formulation and various features.  Its recent progress for RF GaN and power GaN devices will also be presented, showing the potentials of this physics-based compact model.

Source: School of Integrated Circuits